| 摘要 |
PURPOSE:To make a highly integrated and efficient device, by providing a wide field oxide film which self-aligns with vertical grooves provided on a main surface of an Si substrate, whose surface is on the same level with the substrate main surface. CONSTITUTION:A resist mask 102 is provided on a P type Si substrate 101, and vertical grooves are provided adjacent to each other by reactive ion etching, and ions are injected to make a P<+> layer 104. Then, the mask 102 is removed, and a CVDSiO2 105 is formed which is thicker than half of te groove's opening width, and etched down to the surface of the substrate. An element forming regin is covered with a resist mask 106 to form vertical grooves 17 by reactive ion etching, and a P<+> layer 104 is formed by injecting ions, thus a channel stopper is completed. Then, After a CVDSiO2 108 of the same thickness has been formed, a field oxide film 109 is completed by etching down to the surface. Said method provides a highly integrated and efficient device without producing any iregularities on the field oxide film end. |
