| 摘要 |
PROBLEM TO BE SOLVED: To reduce an isolation region which is a non-sensing zone for improving resolution and reducing the size of a device. SOLUTION: An APD(avalanche photodiode) 10 has a high concentration P-type region (1st P-type region) 54, a low concentration P-type region (2nd P-type region) 53, which is formed around the high concentration P-type region 54 and whose impurity concentration is lower than those of the high concentration P-type region 54 and an N-type region formed around the low concentration P-type region 53 and a P-type substrate 50 on which those regions are formed. The high concentration P-type region 53 is divided into four light-receiving parts 54a-54d arranged into a shape of cross in a square-shapedθ. Further, the N-type region is composed of an N-type embedded layer 51 formed under the low concentration P-type region 53, and N-type diffused layers 52 formed on the side surfaces of the low concentration P-type region 52.
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