发明名称 MANUFACTURE OF PHOTOMASK AND SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce misdetection due to reflection of the inner walls of a pellicle frame at the time of examination of foreign matter by removing a reticle in a light shielding region near the inner walls of the pellicle frame along the inner walls to form a light transmitting region. CONSTITUTION:The pellicle 13, 23 of a thin transparent film made of nitrocellulose or the like is allowed to cover a pattern region 14 on the reticle 11, 25 by using the pellicle frame 12, 22, and fixed to the frame 12, and the light shielding region of the frame 12 is removed along the whole circumference of the inner walls of the frame 12 to form the light transmitting region 15, 26. When the photomask undergoes the foreign matter examination, He-Ne-laser beams are projected through the pellicle 23 on the transmitting region 26 and most of the beams are transmitted almost without being reflected, thus permitting misdetection due to reflection of the inner walls of the pellicle frame to be remarkably reduced and foreign matter near the pellicle frame to be examined.
申请公布号 JPH0442157(A) 申请公布日期 1992.02.12
申请号 JP19900149223 申请日期 1990.06.07
申请人 SEIKO EPSON CORP 发明人 USHIYAMA FUMIAKI
分类号 G01N21/94;G03F1/50;G03F1/62;H01L21/027;H01L21/30 主分类号 G01N21/94
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