| 摘要 |
<p>An antireflection coating (16) for use with a photolithographic process comprises a layer of organic material that planarizes the surface upon which a photoresist layer (21) is deposited, is highly absorptive of deep ultraviolet actinic light, and can be plasma etched along with an underlying metal layer (11), thereby obviating the need for a separate step to remove the exposed antireflection coating prior to metal etch. <IMAGE></p> |
