In situ measurement of a thin film deposited on a wafer.

摘要

A method and apparatus are used to determine the thickness of a layer deposited on a specimen. For example, the thickness of a layer of polycrystalline (62) may be measured as it is deposited over silicon oxide (61) on a silicon wafer (14). The emissivity of radiation at the top of the silicon wafer (14) is detected. The temperature of the silicon wafer (14) is measured and the emissivity variation due to variation of radiation detected at the top of the silicon wafer (14). The resultant signal is used to calculate the thickness of the polycrystalline silicon layer (62). <IMAGE>