Method of manufacturing a silicon oxide film and an oxide based glass for semiconductor devices.

摘要

According to the present invention, there are provided a manufacturing method of a semiconductor device, characterized in that, after a surface of a substrate is reformed by performing high frequency plasma irradiation processing in a state that the substrate is heated, organic silane and ozone are mixed with each other, and a silicon oxide film is formed on the substrate under normal pressure or reduced pressure and also a manufacturing method of a semiconductor device, characterized in that, after a surface of a substrate is reformed by performing high frequency plasma irradiation processing in a state that the substrate is heated, organic silane, gas containing impurities such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film and the like are formed on the substrate under normal pressure or reduced pressure.