发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
摘要 A method of manufacturing a semiconductor substrate comprises a first step of preparing one hundred silicon bodies each having two silicon wafers held together by cohesion after polishing and heating processes. The method further comprises a second step of stacking the silicon bodies in their thickness direction to form a stacked body, and a third step of cylindrically grinding the side surface of the stacked body by a predetermined amount.
申请公布号 US5087307(A) 申请公布日期 1992.02.11
申请号 US19900620450 申请日期 1990.12.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NOMURA, TAKEHIKO;NATSUME, YOSHINORI;HOSOKI, YOSHINORI
分类号 B24B9/06;H01L21/02;H01L21/18;H01L21/20;H01L21/208;H01L21/304;H01L29/06 主分类号 B24B9/06
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