发明名称 |
Implantation and electrical activation of dopants into monocrystalline silicon carbide |
摘要 |
The invention is a method of ion implantation of dopant ions into a substrate of silicon carbide. In the method, the implantation takes place at elevated temperatures, following which the substrate may be oxidized or annealed.
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申请公布号 |
US5087576(A) |
申请公布日期 |
1992.02.11 |
申请号 |
US19890356333 |
申请日期 |
1989.05.24 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
EDMOND, JOHN A.;DAVIS, ROBERT F. |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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