Method of making a side wall contact with reactive ion etching

摘要

A semiconductor device comprises a P-type semiconductor substrate having a major surface, an insulating film formed on the major surface of the semiconductor substrate, a first polycrystalline silicon layer formed on the insulating film, an n+ diffused layer formed on the substrate and adjacent to an end portion of the first polycrystalline silicon layer, and a side wall formed on the end portion of the first polycrystalline silicon layer and formed of a second polycrystalline silicon layer for connecting the end portion of the first polycrystalline silicon layer with the n+ diffused layer.