| 摘要 |
A wafer etching system for forming a fine line pattern on a wafer of a semiconductive material having an etchable film layer with an outer surface being divided by masking into exposed regions and masked regions includes an etchant vapor supply system for producing an etchant vapor of an etchant reactable with the etchable film layer. The system also includes an aerosol centrifuge etching device, including an expansion nozzle for adibatically expanding the etchant vapor received from the supply system to form therefrom etchant aerosols. The aerosol centrifuge etching device also includes a centrifuge which receives and uniformly accelerates the received etchant aerosols with a centrifugal force toward the wafer to be etched. The aerosol centrifuge etching device further includes mounting means for mounting the wafer within the centrifuge so the etchant aerosols may impinge upon the outer surface of the wafer and etch away the exposed regions of the etchable film layer. A method is also provided of using the aerosol centrifuge etching device and system for forming fine line patterns on wafers.
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