OPTICAL MEASUREMENT METHOD FOR BIOTISSUE AND LIGHT SOURCE DEVICE FOR THIS MEASUREMENT

摘要

PURPOSE:To realize a wavelength region where use frequencies are high by using a semiconductor laser, the active layer of which is GaxIn1-xAs and the clad layer and ohmic contact layer of which are AlxGa1-xAs. CONSTITUTION:The semiconductor laser, in which the substrate is GaAs and the materials of the clad layer and ohmic contact layer are the AlxGa1-xAs making lattice matching with the substrate and the material to constitute the active layer is GaxIn1-x(0<=x<=0.5) and making lattice matching with the substrate, is used as the light source. Oscillation wavelengths from about 780 up to 1100nm are obtd. with this semiconductor laser by changing the compsn. x of the active layer. The identification of the material of the in-vivo tissue by the scanning of plural laser beams varying in wavelength from a visible to near IR region and the measurement of the distribution thereof are facilitated in this way. The widening of the materials which can be identified is attained for the present condition. The improved space resolving power and the shortened time for measurement are obtd. in the measurement of the tissue distribution.