CONTROL METHOD OF GAS FLOW RATE AT VAPOR PHASE EPITAXIAL GROWTH APPARATUS,申请号JP19900148103-传众专利搜索

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发明名称	CONTROL METHOD OF GAS FLOW RATE AT VAPOR PHASE EPITAXIAL GROWTH APPARATUS
摘要
申请公布号	JPH0439921(A)	申请公布日期	1992.02.10
申请号	JP19900148103	申请日期	1990.06.05
申请人	FUJITSU LTD	发明人	MARUYAMA KENJI;MURAKAMI SATOSHI
分类号	H01L21/205;H01L21/365	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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