| 摘要 |
<p>PURPOSE:To obtain a method of depositing metal of high quality as a conductor by high selectivity in high yield without using resist by incorporating a step of surface-modifying a desired position including selective light emitting on the surface of a base, and a step of selectively depositing metal on an electron donative surface corresponding to the position. CONSTITUTION:A step of surface-modifying a desired position including selective light emitting on the surface of a base 1 and a step of selectively depositing metal on an electron donative surface corresponding to the position are included. For example, a latent image chamber 7 is evacuated in vacuum, O2 gas is introduced into the chamber 7, KrF excimer laser is used as a light source 8, a laser mask having 248nm of wavelength is uniformly emitted to a mask 10, a pattern image of a mask 15 is focused on the n<+> type a-Si film surface on an Si substrate 1, and a latent image made of an SiO2 film of about 80Angstrom of thickness is formed on the a-Si film surface. Then, the substrate 1 is moved to an Al selectively depositing chamber 13, DMAH and H2 are introduced, and an Al film is selectively deposited on the a-Si film surface not formed with the latent image to form an electrode.</p> |
