| 摘要 |
PURPOSE:To obtain a solid-state image sensing device capable of miniaturization wherein hindrance to miniaturization is eliminated, by bump-connecting a lead with at least one row out of bonding pad rows, and wire-bonding at least one of the other raws. CONSTITUTION:In a solid-state image sensing device 17, a solid state image sensing element chip 51 is stacked on a ceramic base 53 having a pad 52 composed of a plurality of rows; a lead 55 composed of a copper foil or the like is connected, via a bump 54, with one row out of the pad 52 composed of a plurality of rows; said lead 55 is stretched toward the back direction via the side surface of a base 53, in order to directly constitute an I/O terminal for the outside. On the other hand, the other rows of the pad 52 of the chip 51 are connected with a conducting pattern on the base 53 by using, e.g. bonding wires 56. Thereby superflous ceramic bases and conducting patterns are unnecessitated, and only the necessary and minimum size is required, so that the solid-state image sensing device can be miniaturized.
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