| 摘要 |
<p>Uniaxially conductive connector formed in situ on microchip by laser drilling an insulating layer at least 5 micrometres thick to provide holes communicating with the chip bonding sites, and depositing metal in the holes to establish electrical connection with the bonding sites. Excimer U.V. laser ablation of a polyimide insulating layer is preferred, followed by removal of a surface layer (preferably of amorphous polyamide) from the insulating layer to expose the ends of the metal deposited in the holes.</p> |
