发明名称 |
SEMICONDUCTOR PRESSUR SENSOR |
摘要 |
There is a bridge circuit which is driven by a constant-current including a thermistor. The bridge circuit is constituted by strain gages defined by P-type diffused layers. Strain gages which constitute in combination the bridge circuit are defined by diffused resistor layers having a surface impurity concentration which is set so as to fall within the range from 2.3x1018 to 2.5x1018 atoms/cm3. The B constant of the thermistor is selected so as to fall within the range from 1400K to 2400K. |
申请公布号 |
KR920001226(B1) |
申请公布日期 |
1992.02.06 |
申请号 |
KR19870008157 |
申请日期 |
1987.07.27 |
申请人 |
HITACHI MFG. CO., LTD. |
发明人 |
MIYAJAKI, ATSUSHI;GOBAYASHI, RYOICHI |
分类号 |
H01L29/84;G01L9/00;G01L9/04;G01L9/06;(IPC1-7):H01L29/84 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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