| 摘要 |
<p>A structure of a ferroelectric capacitor C exists on a source region (23) between a gate electrode (22) and a local oxide film (26). The capacitor C has a ferroelectric film (29) which is sandwiched between an upper electrode (30) and a lower electrode (31), and is provided with a conductive film (32) for preventing a reaction between the lower electrode (31) and the source region (23). The film (32) is made of TiN, TiON , TiW or MoSi. Even if, for the purpose of changing the crystalline quality of the ferroelectric film (29), it is subjected to an oxygen annealing treatment aftr formimg the film (29), oxygen is blocked with the conductive film. Therefore, no silicon oxide film is formed on the interface between the source and the capacitor C, and the reduction of a contact resistance and the avoidance of a serial parasitic capacitance can be attained. Thereby, the degree of freedom of the region for forming the capacitor C is increased, and a large scale integrated circuit can be realized.</p> |
