发明名称 PROCESS FOR NITRIDING SILICON-CONTAINING MATERIALS
摘要 <p>A process for nitriding materials containing silicon to form a silicon nitride material predominantly in the alpha phase is disclosed which includes nitriding the silicon-containing material by subjecting it to a nitriding atmosphere containing at least nitrogen gas in combination with at least one other nitriding gas while keeping the composition of the nitriding atmosphere substantially constant by maintaining a substantially constant partial pressure of nitrogen gas during the nitriding, even though nitrogen is being consumed during the nitriding step to form the silicon nitride.</p>
申请公布号 WO1992001650(A1) 申请公布日期 1992.02.06
申请号 US1991005192 申请日期 1991.07.23
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