| 摘要 |
PURPOSE:To obtain a highly accurate pattern with optimum beam emission amount by employing two types of patterns to be measured of single or a plurality of adjacent patterns at both sides of two types of single pattern to be measured of different width to extract the electron scattering intensity distribution. CONSTITUTION:Rectangular patterns are provided in such a manner that the patterns I, II have rectangles 5, 6 of widths 2r0, 2r1. The pattern III has a rectangle of width W spaced at a distance W at both sides of a rectangule of width 2r2. The pattern IV has a rectangle of width W spaced at a distance W at both sides of the pattern III. The rectangules 5-7 and 9 are drawn by the electron beam of quantity Q, and the rectangle 8, 10 are drawn by the electron beam of quantity Q, and are developed. The electron scattering intensity distributions of the distances r0-r9 from the center O of the rectangles are obtained, simultaneous equations relative to the q, Q and developing energy E are solvent to determine the electron scattering intensity distribution formula. When exposure conditions are selected at every pattern suitably using the distribution formulae, microminiature and accurate pattern can be formed. |
