| 摘要 |
PURPOSE:To obtain vertical P-N-P and N-P-N transistors simultaneously on the same substrate by forming a buried layer in a doughnut shape. CONSTITUTION:The inside of a buried layer 2 is removed to form a doughnut shape, an N type epitaxial layer is separated on a P type Si substrate 1 together with a dielectric layer 3 and a channel stopper 7, a P type layer 5 is formed, and an N type layer 6 is formed at the layer 5 on the buried layer without hole. According to this configuration, P-N-P and N-P-N transistors can be formed vertically on the same substrate. |
