| 摘要 |
PURPOSE:To readily obtain aluminum electrode and wire by laminating W, T, Nb, etc. on an aluminum layer, etching it with gas plasma containing F, and then etching it with gas plasma containing chlorine. CONSTITUTION:Al4, W5 are sputtered on an oxidized film 3 containing the exposed part of an active layer 2. A resist mask 6 is covered thereon, and when it is exposed with gas plasma of CF4:Ar=3:7, the W readily becomes fluoride and is selectively etched. When it is then treated with gas plasma of CCl4:Ar=3:7, the aluminum becomes chloride, and is thus etched, Al2O3 is not formed on the surface, and microminiature pattern of aluminum electrode and wiring can be readily obtained. Similarly, the electrode and wire can be obtained by using metals readily forming fluoride, e.g., Ti, Mo, Nb., etc. |
