发明名称 |
MIS electrode forming process. |
摘要 |
<p>There is disclosed a process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium or sulfur-passivated, and then an insulation film being formed. <IMAGE></p> |
申请公布号 |
EP0469604(A2) |
申请公布日期 |
1992.02.05 |
申请号 |
EP19910112950 |
申请日期 |
1991.08.01 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
SHIKATA, SHIN-ICHI |
分类号 |
H01L21/28;H01L21/336;(IPC1-7):H01L21/285;H01L21/306 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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