Tunnel injection semiconductor devices and its manufacturing process.

摘要

A tunnel injection type semiconductor device having an MIS structure comprising a semiconductor region, a source (9), a drain (9) and a gate (4) electrode wherein, said source (9) and said drain (9) are composed of a metal or metal compound member, respectively, both of which having an overlapping portion with said gate electrode (4); a first conductivity type high impurity concentration semiconductor layer (5) is formed in said semiconductor region (1) in contact and contiguous to said metallic member (9) at the drain side; said source provides a Schottky barrier junction to said semiconductor region while said drain provides an ohmic contact to said semiconductor region; and a tunneling current flowing across a Schottky barrier junction between said source and said drain is controlled by a gate voltage.