Polymer light emitting diode containing at least one semi-conducting polymer adapted for electron transport and/or hole blocking

摘要

The device such as a light emitting diode comprises a plurality of component layers with: a).a first outer layer being used for electron injection; b).a second opposing outer layer being used for "hole" injection and c).a plurality of intermediate layers arranged therebetween being used for charge semi-conduction comprising at least one semi-conducting polymer. The semi-conducting polymer comprises a polymer selected from a nitrogen and/or sulphur containing polymer that is partially or substantially conjugated. The ratio of thicknesses of the semi-conducting polymer layers is 0.1-10 with the least thick layer being the least efficient semi-conductor.