| 摘要 |
<p>PURPOSE:To prevent the deterioration of production yield caused by write-in by obtaining an output after inversing the decision of a sense amplifier to form a memory cell transistor according to the inversion data of a storage data. CONSTITUTION:An inversion circuit 20 is provided to apply the output of a sense amplifier 11 to an output buffer by inversing it as necessary. The operation caused by a changeover circuit 30, setting whether the output of the sense amplifier 11 is inversed or not, is set. Namely, the memory cell transistor, in which the data are written, is less than the half number by writing the inversion data in the memory cell transistor when the memory transistor, in which the data are written, exceeds the half number. Thus, the memory cell number is not increased more than the half number even when the writing number of the data to a memory cell 10 is increased, and the deterioration of production yield can be prevented.</p> |
