| 摘要 |
<p>(Purpose) In the production method of a semiconductor device, it is an object of the present invention to achieve a dry etching method of which the selection rate for a silicon oxide layer is low and the processing time is shorter and by which reliability and yield are improved. (Solution) An SiO2 layer (3) serving as a first silicon oxide layer is formed by thermal oxidation on an aluminum wiring (2) which has been formed by vapor deposition on an Si-substrate (1), and an SOG layer (4) is applied by a spinner as a second silicon oxide layer onto the SiO2 layer (3) having a ruggedness reflecting the steps in the aluminum wiring (2). A reactive ion etching is employed as the dry etching in an etchback process. The gas to be used is a mixed gas of C2F6 (carbon fluoride gas) causing a liberation of fluorine radicals F*, and Ar (an inert gas). <IMAGE></p> |
