Method of depositing fluorinated silicon nitride.

摘要

Method of forming a fluorinated silicon nitride film on a semiconductor substrate (11) by first forming a coating of ammonium hexafluorosilicate on the electrode (12) of a plasma reactor to serve as a source of fluorine during the silicon nitride deposition procedure. The ammonium hexafluorosilicate coating is formed by generating a plasma of carbon tetrafluorine and oxygen within the reactor, then a plasma of nitrogen, followed by a plasma of silane and helium with nitrogen. The substrate (11) is then placed in the reactor and a plasma employing silane and helium together with nitrogen is generated at low RF frequency (20) to produce a fluorinated silicon nitride film on the substrate (11). <IMAGE>