Improvements in or relating to integrate circuits.

摘要

A circuit for providing a bias to the substrate of a dynamic memory device having a memory array and peripheral circuitry formed in a semiconductor substrate is disclosed. The circuit includes a first pump and oscillator to provide a substrate bias in a memory standby mode. A second power pump and oscillator is included to provide a substrate bias when the memory is active. A booster oscillator and pump to provide a substrate bias when the memory is active and when the substrate voltage level is greater than a preset level is also provided. A method for controlling the voltage level of the substrate upon which a dynamic memory device is formed is also disclosed.