| 摘要 |
<p>A superconductive optoelectronic device comprising a superconductive optoelectronic device, comprising a substrate, a photoconductive gate region formed on the substrate, and a source region and a drain region formed on the substrate at opposite sides of the gate region respectively so as to face toward each other across the gate region, and means for supplying bias voltage between said source region and drain region, said source and drain regions being made of a Bi-based superconductive material, said gate region being made of a basic substance of Bi2O3 or Bi2O3; M<2><+> (M=Sr, Ca, Cu) of superconductive-conjugate photoconductivity which shows photoconductivity at a temperature below the critical temperature for superconductivity of said relevant superconductive material, whereby an electric current flowing between said source region and drain regions is controlled in accordance with intensity of light which is made incident upon the gate region. <IMAGE></p> |
