| 摘要 |
<p>A dielectric element employing an oxide-based dielectric film capable of suppressing oxidation of an electrode or deterioration of film characteristics of the oxide-based dielectric film is obtained. This dielectric element comprises an insulator film including the oxide-based dielectric film (7, 15, 27, 52, 77) and the electrode including a first conductor film (8, 12, 13, 25, 28, 50, 53, 75) containing at least a metal and silicon. The aforementioned metal includes at least one metal selected from a group consisting of Ir, Pt, Ru, Re, Ni, Co and Mo. Thus, the aforementioned first conductor film serves as a barrier film for stopping diffusion of oxygen. In heat treatment for sintering the oxide-based dielectric film, therefore, oxygen is effectively inhibited from diffusing along grain boundaries of the electrode. Consequently, a conductive material located under the electrode can be inhibited from oxidation. <IMAGE></p> |
