| 摘要 |
PURPOSE:To increase a measurement accuracy by a method wherein the parameters of a mark signal to be processed are so determined as to get the best measurement accuracy of the mark signal based on the fact that the change of the parameters of the observed mark signal which is to be processed leads to a very small change in the measurement accuracy of the mark signal and then an alignment is conducted using the determined parameters. CONSTITUTION:A reticle RT is carried onto a reticle stage RS by a carrier hand system to be set on the reticle stage RS and a wafer WF is carried onto a wafer stage WS by the carrier hand system to be secured on the wafer stage WS by vacuum suction. With wafer alignment marks WAML and WAMR moved onto an XY stage, the wafer is photographed through an off-axisscope OS and is roughly aligned. Nextly, an alignment mark of a shot SH to be observed by the wafer WF is carried to a site below a projection lens according to the values measured the XY stage XYS and interferometers IFX and IFY to be held at a site where it can be observed with a camera CM. Then, the alignment mark is observed, the measurement parameters are optimized and an alignment is made by using the best set of the parameters. |
