发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To form fine patterns with an excellent resolution and aspect ratio by forming a layer consisting of a mixture composed of the dimethyl sulfoxide added to polysilane on a substrate, exposing the layer, and then developing the layer with a developer essentially consisting of low mol. wt. polysiloxane. CONSTITUTION:The layer consisting of the mixture composed of the dimethylsulfoxide added to the polysilane having the constituting unit of formula I (in the formula I, R<1>, R<2> are 1 to 16C univalent org. groups of the same kind or different kinds) is formed on the substrate and the required parts of the mixture layer are exposed by exposing with active radiations; thereafter, the mixture layer is developed with the developer essentially consisting of the low mol. wt. polysiloxane expressed by formula II (in the formula II, R<3> denotes a substd. or unsubstd. monovalent hydrocarbon group; (a) denotes an integer 2 or 3), by which the active ray exposed parts of the polysilane layer are removed. The patterns having the excellent resolution and aspect ratio are formed by using the polysilane in this way.
申请公布号 JPH0431865(A) 申请公布日期 1992.02.04
申请号 JP19900137683 申请日期 1990.05.28
申请人 SHIN ETSU CHEM CO LTD 发明人 HIDA YOSHIISA;MORI SHIGERU;FUKUSHIMA MOTOO;TABEI EIICHI
分类号 G03F7/075;G03F7/32;H01L21/027;H01L21/30 主分类号 G03F7/075
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