| 发明名称 |
PROCESS FOR PRODUCING THIN SINGLE CRYSTAL SILICON ISLANDS ON INSULATOR |
| 摘要 |
A semiconductor fabrication process uses an epitaxial layer as an etch stop in a plasma etch process. In one embodiment, mechanical stops and an epitaxial layer are used in combination for stopping precisely at a desired end point.
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| 申请公布号 |
US5086011(A) |
申请公布日期 |
1992.02.04 |
| 申请号 |
US19880147892 |
申请日期 |
1988.01.25 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SHIOTA, PHILIP S. |
| 分类号 |
H01L21/301;H01L21/762 |
主分类号 |
H01L21/301 |
| 代理机构 |
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代理人 |
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| 主权项 |
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