发明名称 Increased intensity laser diode source configuration
摘要 A semiconductor laser chip having one or more lasing junctions is mounted on one side of a thin sheet of thermally conductive material opposite to a second semiconductor laser chip of the same construction mounted on the opposite side. The thin sheet of material allows the emitting facets of the semiconductor laser chips to be placed in close proximity for coupling into the end of an optical fiber or other use. Made of hardened copper or other suitable material, the thin sheet of material serves as a heat conducting path between the semiconductor laser chips and a heat sink. Different configurations may utilize different shapes for the thin sheet of material; the thin sheet may have parallel opposing sides or opposing sides that are at an angle with respect to one another.
申请公布号 US5086431(A) 申请公布日期 1992.02.04
申请号 US19900631589 申请日期 1990.12.21
申请人 SANTA BARBARA RESEARCH CENTER 发明人 HARDY, JR., ARTHUR H.;SCHUBERT, WILLIAM C.
分类号 G02B6/42;H01S5/024;H01S5/40 主分类号 G02B6/42
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