| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which reduces a power loss at the small power driving time of a load and deals with even high power driving. SOLUTION: This device is provided with a power MOSFET 2 to be turned into conductive state by impressing a first driving voltage to a gate electrode and an IGBT to be turned into conductive state by impressing the second driving voltage of a level different from that of the first driving voltage to a gate electrode, the power MOSFET and the IGBT are connected in parallel to a current to be supplied to the load. When the current allowed to flow through the load is small, the first driving voltage for driving only the power MOSFET is impressed to the gate electrode, and when the current allowed to flow through the load is great, the second driving voltage higher than the first driving voltage for mainly driving the IGBT is impressed to the gate electrode. |
