发明名称 THICK FILM IC RESISTOR STRUCTURE
摘要 <p>PURPOSE:To prevent generation of defect when a thick film is paste-printed, and to improve heat-radiating propery by a method wherein a plurality of resistor layers are formed using thick film paste of the same composition, and a coating layer, consisting of SiC and TiO2 mixed at different weight ratio, is interposed between the resistor layers and an insulating substrate. CONSTITUTION:An Al2O3 layer 12 having the prescribed thickness is formed on an AlN substrate 11. Coating layers 13A, 13B and 13C are superposed in the thickness of 10<2>(1) to 10<4>(1). SiO2 and TiO2 are mixed therein at a different weight ratio. The coating layers 13A, 13B and 13C are defined by an electrode part (conductive paste) 14 on the alumina layer 12, the upper surfaces of the coating layers are coated with resistor layers 15A, 15B and 15C consisting of thick film paste, and the title resistor structure is completed.</p>
申请公布号 JPH0430401(A) 申请公布日期 1992.02.03
申请号 JP19900136239 申请日期 1990.05.25
申请人 MITSUBISHI MATERIALS CORP 发明人 NAGASE TOSHIYUKI;YOSHIDA HIDEAKI;KUROMITSU YOSHIO;TANAKA TADAHARU;KANDA YOSHIO
分类号 H01C7/00;H01L27/01;H05K1/16 主分类号 H01C7/00
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