| 摘要 |
PURPOSE:To obtain semiconductor single crystal having a given oxygen concentration distribution by changing intensity of magnetic field applied to semiconductor melt maintained in a quartz glass crucible corresponding to length of single crystal bar pulled up. CONSTITUTION:A silicon single crystal bar 1 is formed by pulling up seed crystal 4 in contact with the surface of melt 3 in the pulling direction at low speed (v) while rotating a quartz crucible 2 and the seed crystal in fixed low speed. Oxygen dissolved in the melt 3 is bonded to Si, made into volatile SiO, released from the melt 3, entrained and removed with an argon gas. However, since oxygen not released and removed as SiO is left in the melt 3, the silicon single crystal bar 1 does not become completely pure and contains oxygen. Since oxygen contained in the silicon single crystal 1 consists essentially of interstitial oxygen in a bonded state to silicon atom, concentration of oxygen existing in the silicon single crystal can be known by measuring concentration of interstitial oxygen.
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