发明名称 |
METHOD OF DEPOSITING FLUORINATED SILICON NITRIDE |
摘要 |
89-3-705 METHOD OF DEPOSITING FLUORINATED SILICON NITRIDE Method of forming a fluorinated silicon nitride film on a semiconductor substrate by first forming a coating of ammonium hexafluorosilicate on the electrode of a plasma reactor to serve as a source of fluorine during the silicon nitride deposition procedure. The ammonium hexafluorosilicate coating is formed by generating a plasma of carbon tetrafluorine and oxygen within the reactor, then a plasma of nitrogen, followed by a plasma of silane and helium with nitrogen. The substrate is then placed in the reactor and a plasma employing silane and helium together with nitrogen is generated at low RF frequency to produce a fluorinated silicon nitride film on the substrate.
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申请公布号 |
CA2047536(A1) |
申请公布日期 |
1992.02.01 |
申请号 |
CA19912047536 |
申请日期 |
1991.07.22 |
申请人 |
GTE LABORATORIES INCORPORATED |
发明人 |
TABASKY, MARVIN J.;TWEED, BRUCE |
分类号 |
C23C16/34;C23C16/509;H01L21/318;(IPC1-7):C23C14/06 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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