METHOD WRITING DATA AND TEST CIRCUIT IN MEMORY MATERIAL

摘要

The data writing method without using input/output lines (I/O) comprises the steps of selecting a MOS transistor by using a controller (1) to generate a voltge difference between a pair of bit lines (B/L) and (B/L) and directly storing the data in a capacitor (C1) of a memory cell (5) selected by a word line (W/L). The RAM testing circuit comprises a data writing unit having MOS transistors (M1-M4), a data checking unit having MOS transistors (M5,M6) an NMOS transistor (M8) and a control unit (1) for controlling the units, to reduce fault ratio.