| 摘要 |
<p>A intersubband transition superlattice semiconductor laser (10) for emitting light at desired wavelength includes a semiconductive substrate (12), a first superlattice structure section (I) arranged on the substrate and having a first quantum well region (16a), and a second superlattice structure section (II) arranged adjacent to the first superlattice structure section on the substrate and having a second quantum well region (16b). Photoemission may be accomplished at desired wavelength by arranging the first and second quantum well layers (16a, 16b) such that these layers are different in thickness from each other. <IMAGE></p> |
