| 摘要 |
<p>A buried heterostructure type distributed feedback semiconductor laser comprises a semiconductor substrate (11) transparent to an oscillation light beam, a laser stripe including a diffraction grating, an active layer (14), and a guiding layer (13) formed on the semiconductor substrate (11), and semiconductor peripheral region (17, 18, 19) formed so as to cover the laser stripe on the semiconductor substrate (11). The semiconductor peripheral region is transparent to an oscillation light beam. Rectangular grooves (40) are formed near both side of emission facet of the laser stripe more deeply than the laser stripe. Since a radiation mode from the laser stripe is reflected and scattered by the grooves (40), it cannot hardly reach the emission facet. Therefore, the radiation mode does not interfere with an output beam from the laser. <IMAGE></p> |
