| 摘要 |
PURPOSE:To be capable of being used under high-temperature surroundings by a method wherein a semiconductor diamond is used as the material for a sensor part. CONSTITUTION:A diamond film 3 which has been doped with boron is formed, as a sensor part, on a single-crystal diamond substrate 4 by a mocrowave plasma CVD method. After that, a plasma etching operation is executed; and boron-doped diamond film 3 is processed to be a shape as shown in the figure. Electrodes 1, 2 are formed by an electron-beam vapor deposition method by using metal masks in four parts. This Hall element can stably be operated under high-temperature surroundings and in a corrosive atmosphere. |
