| 摘要 |
PURPOSE:To enable a two-dimensional grating structure to be produced by forming an atom step by maskless etching and forming the atom step with different gaps within the same substrate by changing the amount of this etching within a semiconductor substrate surface. CONSTITUTION:Maskless etching is performed by performing raster scanning of an electron beam 11 while supplying chlorine gas 12 onto a GaAs (001) substrate 10. At this time, maskless etching is performed by changing the amount of dosage of an electron bema in [110] direction on the GaAs substrate 10, thus forming atom steps 18, 19, and 20 corresponding to a slanted surface which is changed in sequence. A hydrogen plasma beam is emitted onto the GaAs substrate where the atom steps with different gaps are provided, thus enabling the steps and terraces to be flat. Then, the substrate temperature is reduced while emitting the hydrogen plasma beam for cutting hydrogen plasma beam and at the same time growing a GaAs buffer layer by the MEE method. Then, by laminating AlAs and GaAs by 1/2 atom layer each using the MEE method and repeating it, an (AlAs)1/2(GaAs)1/2 vertical type super-grating is produced on the same substrate 10, thus enabling a two-dimensional grating structure with different cycles of the vertical type super-grating within the same substrate. |
