| 摘要 |
PURPOSE:To enable characteristics of a Schottky junction to be improved by allowing a surface of a semiconductor diamond to be treated with a plasma including oxygen or halogen and then forming a metal electrode. CONSTITUTION:After changing properties of a diamond surface by plasma including elements with etching property such as an oxygen atom and chlorine/ fluorine atoms, a metal electrode is formed. Namely, since a diamond surface is hit by oxygen or halogen plasma, the oxygen, halogen, and carbon atom at an outermost layer of the diamond are joined. Although the carbon atoms at the outer most layer were joined together, they are partially cut off and are joined to the oxygen and halogen, thus causing distortion of only a grating near the outermost layer to be reduced. Therefore, it is estimated that periodicity of grating is improved so that a band structure near the outermost layer is arranged, thus enabling parasitic level due to distortion of grating etc. Thus, an improved Schottky junction of diamond is obtained so that advantages available in a diamond semiconductor can be fully utilized, thus achieving a Schottky junction with characteristics where a backward current is 10<-13>A/cm<2> or less and an n value calculated from voltage dependency of a forward current is 1 - 2. |
