Process for producing a chalcopyrite solar cell.

摘要

A novel process is proposed in which a uniform semiconductor layer made of copper gallium diselenide or copper aluminium diselenide is first produced on a substrate provided with a first electrode layer. A semiconductor material of opposite conductivity type is produced by ion exchange in its upper layer region so that a heterojunction with the unchanged lower layer region is produced. A second electrode layer completes the cell structure, which has a p-type copper gallium diselenide layer as absorber and an n-type window layer. The process can be used to produce solar cells with different directions of incidence of light but always with high efficiency.