| 摘要 |
<p>PURPOSE:To measure concentration of oxygen between lattices of a low resistance silicon crystal having 0.1ppm or more of dopant concentration by providing a step of reducing in thickness a sample when the concentration of oxygen between the lattices of the crystal is obtained by measuring the intensity of an infrared ray absorption peak, and a step of implanting hydrogen atoms to the sample by heating it at 100-250 deg.C of a range in a hydrogen atom atmosphere. CONSTITUTION:A CZ silicon crystal 1A to be measured is bonded to an FZ silicon crystal 1B having 0.01ppm or less of dopant concentration and 10<16>cm<-3> or less of oxygen concentration between lattices, and the thickness of the crystal 1A is reduced to 5mum. Then, this sample is placed on a heater 5, heated at 130 deg.C for 4 hours in a hydrogen atom atmosphere generated by a plasma generator 4 to implant hydrogen atoms into the crystal. Then, the sample is removed from a treating chamber 2, and quickly cooled up to an ambient temperature. Its cooling speed is from 100-250 deg.C to the ambient temperature within 30 seconds. The dopant in the measuring sample is all inactivated by the above process.</p> |
