| 摘要 |
PURPOSE:To prevent the deterioration of a semiconductor chip due to an abrupt rise of a temperature by a method wherein the chip to be die bonded is gradually heated in a state that the chip is sucked and held by a vacuum collet and is heated to a temperature roughly equal to the temperature of a ceramic package. CONSTITUTION:When a semiconductor chip 11 is die bonded on a ceramic package 15, the chip 11 is gradually heated by heaters provided on a vacuum collet 12 during the period of transfer of the chip 11 to the package 15 after the chip 11 to be die bonded is sucked and held by the collet 12 and the chip 11 is heated to a temperature roughly equal to the temperature of the package 15. For example, the chip 11 is gradually heated to the temperature of the package 15 by controlling the heaters provided on the collet 12. Thereby, it is eliminated that the chip 11 is abruptly heated at the time of the contact of the chip 11 to the package 15 and the deterioration of the chip 11 due to an abrupt heating is reduced. |
