| 发明名称 |
Method for patterned heteroepitaxial growth |
| 摘要 |
Shadow masking layer (130) is undercut during etch of sidewall layer (120) thus preventing sidewall growth during growth of heteroepitaxial region (140), resulting in a planar structure with a high integrity of crystal in the grown region (140).
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| 申请公布号 |
US5084409(A) |
申请公布日期 |
1992.01.28 |
| 申请号 |
US19900543644 |
申请日期 |
1990.06.26 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BEAM, III, EDWARD A.;KAO, YUNG-CHUNG |
| 分类号 |
H01L21/302;H01L21/20;H01L21/203;H01L21/3065;H01L21/76;H01L21/8252 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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