发明名称 Resistor with side wall contact
摘要 A resistor located above the semiconductive substrate of an integrated circuit chip can be made smaller than prior art resistors because no area is allocated for resistor contacts. During manufacture, a resistive strip having the width of the intended resistor is formed. A photoresist mask protects the top and sides of the resistive strip where the resistor is located, and etching exposes the ends but not the top and sides of the resistor. Contact to the resistor occurs at the upwardly extending (usually near vertical) end surfaces of the resistor.
申请公布号 US5084420(A) 申请公布日期 1992.01.28
申请号 US19900479905 申请日期 1990.02.14
申请人 MOS ELECTRONICS CORP. 发明人 TSAI, NAN-HSIUNG
分类号 H01C1/034;H01C1/14;H01L27/06;H01L27/11 主分类号 H01C1/034
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