| 摘要 |
In a contact type image sensor prepared by disposing a plurality of sandwich type photoelectric conversion elements each of which is obtained by sandwiching an amorphous semiconductor layer as a photoelectric conversion layer between a metal electrode and a light-transmissive electrode, the amorphous semiconductor layer is insulated and separated by means of a silicon oxide layer in every element. The silicon oxide layer is obtained by oxidizing selectively the amorphous semiconductor layer in accordance with the optically assisted anodizing process.
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